Hafnium powder, The price is for reference only, please contact customer service for quotation.
element ： Hf
purity ： 3N-5N
shape ： powder
weight ： 1Kg
Package ： Vacuum packaging, carton, wooden box
Formal invoices are provided for all orders, and formal quotations and contracts are provided according to customer needs
Market reference price: ￥ 500.00/kg ,The price is for reference only. If necessary, please consult the quotation, and the quotation on that day shall prevail
Product Name: hafnium powder
specification: various specifications and sizes can be customized according to customer requirements
Physical and chemical properties:
hafnium is silver gray metal with metallic luster; There are two variants of hafnium: α Hafnium is a hexagonal close packed variant (1750 ℃), and its transition temperature is higher than that of zirconium. The metal hafnium has allotropic variants at high temperature. Metal hafnium has high neutron absorption cross section and can be used as control material of reactor
the chemical properties of hafnium are very similar to those of zirconium, which has good corrosion resistance and is not easy to be eroded by general acid-base aqueous solutions; It is easily soluble in hydrofluoric acid to form fluorine complexes. At high temperature, hafnium can also be directly combined with oxygen, nitrogen and other gases to form oxides and nitrides
Application fields:
hafnium is very useful because it is easy to emit electrons (such as filament of incandescent lamp). It is used as the cathode of X-ray tube, and the alloy of hafnium and tungsten or molybdenum is used as the electrode of high-voltage discharge tube. It is commonly used in X-ray cathode and tungsten wire manufacturing industry. Pure hafnium has plasticity, easy processing, high temperature resistance and corrosion resistance. It is an important material in the atomic energy industry. Hafnium has a large thermal neutron capture cross section and is an ideal neutron absorber. It can be used as a control rod and protective device of atomic reactor. Hafnium powder can be used as rocket propeller. The cathode of X-ray tube can be manufactured in the electrical industry. Hafnium alloy can be used as the front protective layer of rocket nozzle and glider re-entry aircraft, and HF TA alloy can be used to make tool steel and resistance materials. Hafnium is used as an additive element in heat-resistant alloys, such as tungsten, molybdenum and tantalum. HFC can be used as cemented carbide additive due to its high hardness and melting point. 4tachfc has a melting point of about 4215 ℃, which is the compound with the highest melting point known. Hafnium can be used as a getter in many inflation systems. Hafnium getter can remove unnecessary gases such as oxygen and nitrogen in the system. Hafnium is often used as an additive of hydraulic oil to prevent the volatilization of hydraulic oil during high-risk operation. It has strong anti volatilization, so it is generally used in industrial hydraulic oil. Hydraulic medical oil
hafnium is also used in the latest Intel 45 nano processor. Because silicon dioxide (SiO2) has manufacturability and can reduce the thickness to continuously improve the efficiency of transistors, processor manufacturers use silicon dioxide as the material for making gate dielectrics. When Intel introduced the 65nm manufacturing process, although it has made every effort to reduce the thickness of silicon dioxide gate dielectric to 1.2nm, which is equivalent to five layers of atoms, when the transistor is reduced to the size of atoms, the difficulty of power consumption and heat dissipation will increase at the same time, resulting in waste of current and unnecessary heat energy. Therefore, if current materials are continued to be used to further reduce the thickness, the leakage of gate dielectric will rise significantly, The technology of reducing transistors is at the limit. In order to solve this key problem, Intel is planning to use a thicker high-k material (hafnium based material) as the gate dielectric to replace silica, which has also successfully reduced the leakage by more than 10 times. In addition, compared with the previous generation of 65nm technology, Intel's 45nm process increases the transistor density by nearly twice, which can increase the total number of transistors of the processor or reduce the volume of the processor. In addition, the power required for transistor switching action is lower, and the power consumption is reduced by nearly 30%. The internal connections are made of copper wire with low-k dielectric, which can smoothly improve the efficiency and reduce the power consumption, and the switching action speed is accelerated by about 20%
Specification | ||||||
Content | Hf+Zr | Zr | Fe | Mg | Ni | Cl |
≥99.9% | ≤2.0% | ≤0.5% | ≤0.5% | ≤0.5% | ≤0.5% | |
Particle Size | -200 mesh, -400 mesh, 325mesh, 1-3um | |||||
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