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Silicon carbide substrate / SiC substrate $ 80.00

High purity Silicon carbide substrate material,The price is for reference only, please contact customer service for quotation.

element : SiC     

purity : 4N      5N     

shape : Substrate     

weight : piece     

Package : 100-level clean bag, 1000 supercained room     

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Formal invoices are provided for all orders, and formal quotations and contracts are provided according to customer needs

Product details

The crystal structure of silicon carbide (SiC) single crystal substrate material is hexagonal, and the growth method is chemical vapor deposition. The Mohs hardness is 9.5. It has many excellent properties, such as high thermal conductivity, high saturation electron mobility, and resistance to voltage breakdown. Ability and so on.


Silicon carbide crystal substrate material is a new generation of wide-bandgap semiconductor material, which can break through the theoretical limitations of silicon-based semiconductor materials. It has high thermal conductivity (3 times that of silicon), high breakdown electric field strength (10 times that of silicon), High saturation electron drift speed (2 times that of silicon), small dielectric constant, strong radiation resistance, good chemical stability, and small lattice mismatch with GaN (4%), etc., are a new generation of light emitting diodes (LEDs) Substrate materials, high-power power electronic materials.

Silicon carbide crystal substrate material specifications and parameters:

Standard size: 5x5mm, 10x5mm, 10x10mm, 15x15mm, 20x20mm, φ2”x0.33mm, φ4”x0.35mm, φ4”x0.5mm, φ6”x0.35mm, φ6”x0.35mm, 15x15x0.5mm
Thickness: 0.35mm, 0.5mm, 1.0mm or according to customer requirements
Orientation: <0001> or <0001> 4.0º
Band gap: 3.23 eV
Crystal type: 4H-silicon carbide, 6H-silicon carbide
Doping type: N-type, semi-insulating/V-doped, semi-insulating/undoped
Resistivity: 0.015~0.028 ohm-cm (N type), >1E5 ohm-cm (semi-insulating)
Thermal expansion coefficient: (4~5) x 10 -6 /K
Thermal conductivity@300K: 3.7~4.9 W/cm.K

Silicon carbide crystal substrate material application:

The products are used to make high-temperature, high-voltage, high-power, radiation-resistant semiconductor power devices, which are widely used in 5G communications, high-speed rail, automotive electronics, smart grids, photovoltaic inverters and other fields. Low-grade silicon carbide (containing about 85% SiC) is an excellent deoxidizer, which can speed up the speed of steelmaking, facilitate the control of chemical composition, and improve the quality of steel. In addition, silicon carbide is also widely used to make silicon carbide rods for electric heating elements.