Germanium Telluride Lump (GeTe Lump)

Physical and chemical properties

Germanium telluride, melting point: 724℃. CAS registration number: 12025-39-7. Density: 6.14g/cm3 , GeTe compound has excellent thermoelectric properties, it is used to prepare phase change memory cells, and to prepare a sulfide semiconductor mask for lithography The film is characterized in that the material of the sulfide semiconductor mask is germanium telluride, germanium antimony telluride, silver indium antimony tellurium, antimony telluride or antimony.

Application

Germanium has many special properties, and it has extensive and important applications in semiconductor, aerospace measurement and control, nuclear physical detection, optical fiber communication, infrared optics, solar cells, chemical catalysts, biomedicine and other fields, and is an important strategic resource. .

In the electronics industry, in the alloy pretreatment, in the optical industry, it can also be used as a catalyst. High-purity germanium is a semiconductor material. It is obtained by reducing high-purity germanium oxide and then smelting. The germanium single crystal doped with a small amount of specific impurities can be used to make various transistors.