Silicide series-Please Check The Details Page

Physical and chemical properties

Silicide is a binary compound formed by certain metals (such as lithium, calcium, magnesium, iron, etc.) and certain non-metals (such as boron, etc.) and silicon. It is generally crystal, has metallic luster, is hard and has a high melting point. A metal or non-metal can generate multiple silicides. For example, iron can produce FeSi, FeSi2, Fe2Si5, Fe3Si2, Fe5Si3, etc. It can be obtained by reducing metal (or non-metal) oxides or metal silicates with silicon in an electric furnace.

Application

Silicide for electric heating elements: Metal silicide is one of its earliest applications as electric heating elements. Generally, the lower the silicon content in metal silicides, the higher the melting point, but its oxidation resistance decreases. Therefore, disilicides with low melting points but good oxidation resistance are usually used to make heating elements.

Silicides for high-temperature antioxidant coatings: The remarkable antioxidant capacity of MoSi2 coatings on molybdenum and its self-healing properties have led to extensive research into a large number of other MeSi2-type binary silicides and more complex silicides for all refractory applications. Antioxidant coatings for metals, their alloys and graphite materials including carbon/carbon composites.

It is known that the thickness of the coating has a parabolic relationship with the use time, and the effect of the use temperature on the coating thickness is more sensitive than time. Further research found that the life of the silicide coating is mainly controlled by the interdiffusion ability of elements in the coating system and coating defects. In this regard, the first method is to modify the silicide of the coating through alloying to obtain a multi-component composite oxide protective film with better anti-oxidation properties; the second method is to use gradient compounding to improve the thermal cycle of the coating. Hair-like crack defects.

Silicide for gate electrode films of integrated circuits: As the integration level of integrated circuits increases, the requirements for heat resistance of gate electrodes and interconnection line materials are also increasing. Traditional polysilicon and aluminum materials can no longer meet the requirements; although refractory metals W and Mo have good conductivity and high melting points, they are not resistant to oxidation, which limits the preparation temperature of integrated circuits. Therefore, refractory metal silicides have attracted attention because of their low resistivity and high stability. The four most attractive silicides in this regard are TiSi2, TaSi2, MoSi2 and WSi2. Among them, TaSi2 is the most stable and its resistivity is lower than WSi2 and MoSi2. At the same time, using TaSi2 as the metallization of integrated circuit gates and interconnect lines has its unique advantages, that is, TaSi2 will not be oxidized in dry oxygen. With the emergence of ultra-fine particle technology, the requirements for high temperature stability may be is reduced, then other silicides will become useful