Silicon Carbide (SiC) Sputtering Targets

Physical and chemical properties

Silicon carbide ceramic targets are produced using Si and SiC as raw materials, with a melting point of 2700°C and a density of 3.22g/cm³. The invention has the advantages of simple production process, low production cost, good wear resistance and wide application range. Widely used in semiconductor electronic devices that work under high temperature or high pressure.

Silicon carbide (SiC), also known as silicon carbide, is a silicon and carbon compound with the chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powders have been produced in large quantities as abrasives since 1893. Silicon carbide particles, which can be bonded together by sintering to form tough ceramics, are widely used in applications requiring high durability, such as automotive brakes, automotive clutches, and ceramic plates in bulletproof vests. Electronic silicon carbide applications, such as light-emitting diodes (LEDs) and detectors in early radios, were first demonstrated around 1907. Silicon carbide is used in semiconductor electronic devices that operate at high temperature or high pressure, or both. Large silicon carbide single crystals can be grown by the Lely method. They can be cut into gemstones called synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.

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