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Boron Carbide (B4C) Sputtering Targets
High purity 4N (99.99%)Boron carbideceramic target,The price is for reference only, please contact customer service for quotation.
| Element: | B₄C |
|---|---|
| Purity: | 2N5-4N |
| Shape: | Planar target |
| MOQ: | 1PC |
| Package: | Three-layer vacuum packaging or argon gas protection, in line with IATA, DOT packaging specification. |
Overview
Physical and chemical properties
Boron carbide ceramic target is a tough boron-carbon ceramic and covalent material with a melting point of 2450°C, a density of 2.51g/cm³ and a boiling point of 3500°C. With a Vickers hardness of >30 GPa, it is one of the hardest known materials, second only to cubic boron nitride and diamond.
Related parameters
Material Type Boron Carbide
Symbol B4C
Melting Point (°C) 2,350
Theoretical Density (g/cc) 2.52
Z Ratio **1.00
Sputter RF
Max Power Density
(Watts/Square Inch) 20*
Type of Bond Indium, Elastomer
Comments Similar to chromium.
Application:Boron carbon target is a very important material in the north. Boron carbide is a very hard ceramic material that can be used to manufacture target materials, coating materials and ceramic materials, etc., and can be used to manufacture various high-strength components. It has a very high melting point and thermal stability, so it is very suitable for making target materials.
Target materials are materials used to make thin films, and they are used to make a variety of electronic components such as transistor solar cells and LEDs. Pure boron carbide target is a very ideal target material because it has very high thermal and chemical stability, can maintain stability at high temperatures, and will not be destroyed by chemical reactions. In addition to their use in electronic component manufacturing, pure boron carbide targets are also widely used in the manufacture of coating materials. Coating material is a material used to protect surfaces from corrosion and wear. Pure boron carbide targets can be made into very hard coating materials that can be used to make high-strength components such as tool bearings and automobile engines.
Pure boron carbide targets can also be used to make ceramic materials. Ceramic materials are very hard materials that can be used to make a variety of high-strength components. Pure boron carbide targets can be made into very hard ceramic materials that can be used to make high-strength components such as cutting tools, bearings and automobile engines.
Related Ceramic Sputtering Materials
| Oxide Sputtering Targets | ||||
| Aluminum Oxide(Al2O3) | Iron Tetroxide(Fe3O4) | Lanthanum Nickelate(LaNiO3) | Scandium Oxide(Sc2O3) | Aluminum Zinc Oxide(AZO) |
| Fluorine Tin Oxide(FTO) | Lanthanum Ferrite(LaFeO3) | Strontium Titanate(SrTiO3) | Antimony Tin Oxide(ATO) | Gallium Oxide(Ga2O3) |
| Lanthanum Manganate(LaMnO3) | Strontium Ruthenate(SrRuO3) | Bismuth Oxide(Bi2O3) | Gallium Zinc Oxide(GZO) | Magnesium Oxide(MgO) |
| Strontium Manganate(SrMnO3) | Bismuth Titanate(BiTiO3) | Gadolinium Oxide(Gd2O3) | Molybdenum Oxide(MoO3) | Titanium Dioxide(TiO2) |
| Barium Titanate(BaTiO3) | Hafnium Dioxide(HfO2) | Niobium Oxide(Nb2Ox) | Titanium Pentoxide(Ti3O5) | Cerium Oxide(CeO2) |
| Holmium Oxide(Ho2O3) | Nickel Oxide(NiO) | Tantalum Oxide(Ta2O5) | Chromium Oxide(Cr2O3) | Indium Oxide(In2O3) |
| Neodymium Oxide(Nd2O3) | Terbium Oxide(Tb4O7) | Cobalt Oxide(CoO) | Indium Tin Oxide(ITO) | Lead Oxide(PbO) |
| Thulium Oxide(Tm2O3) | Copper Oxide(CuO) | Indium Zinc Oxide(IZO) | Zinc Tin Oxide(ZTO) | Vanadium Dioxide(VO2) |
| Cuprous Oxide(Cu2O) | Indium Gallium Zinc Oxide(IGZO) | Praseodymium Oxide(Pr6O11) | Vanadium Trioxide(V2O3) | Erbium Oxide(Er2O3) |
| Lanthanum Oxide(La2O3) | Silicon Monoxide(SiO) | Vanadium Pentoxide(V2O5) | Europium Oxide(Eu2O3) | Lanthanum Strontium Cobalt Oxide(LSCO) |
| Silicon Dioxide(SiO2) | Tungsten Trioxide(WO3) | Iron Trioxide(Fe2O3) | Lanthanum Aluminate(LaAl2O3) | Samarium Oxide(Sm2O3) |
| Yttrium Oxide(Y2O3) | Yttrium Zirconium Oxide(YSZ) | Yttrium Barium Copper Oxide(YBCO) | Zinc Oxide(ZnO) | Zirconium Oxide(ZrO2) |
| Fluoride Sputtering Targets | ||||
| Aluminum Fluoride(AlF3) | Dysprosium Fluoride(DyF3) | Neodymium Fluoride(NdF3) | Praseodymium Fluoride(PrF3) | Yttrium Fluoride(YF3) |
| Barium Fluoride(BaF2) | Lithium Fluoride(LiF) | Sodium Fluoride(NaF) | Strontium Fluoride(SrF3) | Zinc Fluoride(ZnF3) |
| Calcium Fluoride(CaF2) | Lanthanum Fluoride(LaF3) | Sodium Aluminum Fluoride(Na2AlF6) | Samarium Fluoride(SmF3) | Ytterbium Fluoride(YbF3) |
| Cerium Fluoride(CeF3) | Magnesium Fluoride(MgF2) | Potassium Fluoride(KF) | ||
| Nitride Sputtering Targets | ||||
| Aluminum Nitride(AlN) | Hafnium Nitride(HfN) | Silicon Nitride(Si3N4) | Titanium Nitride(TiN) | Zirconium Nitride(ZrN) |
| Boron Nitride(BN) | Niobium Nitride(NbN) | Tantalum Nitride(TaN) | Vanadium Nitride(VN) | |
| Carbide Sputtering Targets | ||||
| Boron Carbide(B4C) | Niobium Carbide(NbC) | Tantalum Carbide(TaC) | Tungsten Carbide(WC) | Zirconium Carbide(ZrC) |
| Hafnium Carbide(HfC) | Nickel Carbide(NiC) | Titanium Carbide(TiC) | Tungsten Carbide Cobalt(WC+Co) | Vanadium Carbide(VC) |
| Molybdenum Carbide(MoC) | Silicon Carbide(SiC) | Titanium Carbonitride(TiCN) | ||
| Boride Sputtering Targets | ||||
| Chromium Diboride(CrB2) | Iron Boride(FeB) | Tantalum Boride(TaB) | Titanium Diboride(TiB2) | Hafnium Diboride(HfB2) |
| Lanthanum Hexaboride(LaB6) | Zirconium Diboride(ZrB2) | |||
| Sulfide Sputtering Targets | ||||
| Cadmium Sulfide(CdS) | Iron Sulfide(FeS) | Manganese Sulfide(MnS) | Tantalum Sulfide(TaS) | Magnesium Sulfide(MgS) |
| Copper Sulfide(CuS) | Lead Sulfide(PbS) | Niobium Sulfide(NbS) | Tungsten Sulfide(WS2) | Antimony Sulfide(Sb2S3) |
| Cerium Sulfide(Ce2S3) | Molybdenum Sulfide(MoS2) | Indium Sulfide(In2S3) | Zinc Sulfide(ZnS) | |
| Silicide Sputtering Targets | ||||
| Chromium Silicide(CrSi) | Magnesium Silicide(MgSi) | Tantalum Silicide(TaSi2) | Tungsten Silicide(WSi2) | Zirconium Silicide(ZrSi2) |
| Molybdenum Silicide(MoSi2) | Nickel Silicide(NiSi) | Titanium Silicide(TiSi2) | Vanadium Silicide(VSi) | |
| Selenide Sputtering Targets | ||||
| Bismuth Selenide(Bi2Se3) | Chromium Selenide(CrSe) | Molybdenum Selenide(MoSe2) | Gallium Selenide(Ga2Se3) | Tungsten Selenide(WSe2) |
| Copper Selenide(Cu2Se) | Lead Selenide(PbSe) | Indium Selenide(In2Se3) | Germanium Selenide(GeSe2) | Tin Selenide(SnSe) |
| Cadmium Selenide(CdSe) | Antimony Selenide(Sb2Se3) | |||
| Telluride Sputtering Targets | ||||
| Cadmium Telluride(CdTe) | Lead Telluride(PbTe) | Germanium Telluride(GeTe) | Germanium Antimony Telluride(GST) | Bismuth Telluride(Bi2Te3) |
| Antimony Tritelluride(Sb2Te3) | Antimony Tritelluride(Sb7Te3) | |||
| Oxide Sputtering Targets | ||||
| Antimonide Sputtering Targets | ||||
| Aluminum Antimonide(AlSb) | Indium Antimonide(InSb) | Gallium Antimonide(GaSb) | Zinc Antimonide(ZnSb) | Aluminum Gallium Antimonide(AlGaSb) |
| Compound Sputtering Targets For Ferroelectric/Lithium Batteries | ||||
| Lithium Cobalt Oxide LiCoO2 | Lithium Manganese Nickel Oxide LiNi0.5Mn1.5O3 | Lithium Iron Phosphate LiFePO4 | Lithium-Rich Lithium Cobalt OxideLi(1+X)CoO2 | Lithium-Rich Lithium ManganateLi(1+X)Mn2O4 |
| Lithium TitanateLi4Ti5O12 | Aluminum Doped Lithium Cobalt Oxide AlLiCoO2 | Aluminum Doped Lithium Manganate LiMn2O4+Alx | Lithium Titanium PhosphateLiTi2(PO4)3 | Lithium Manganate LiMn2O4 |
| Lithium Phosphate Li3PO4 | Lithium Silicon Phosphate LiSiPO4 | Barium TitanateBaTiO3 | Strontium TitanateSrTiO3 | Bismuth TitanateBiTiO3 |
| Lanthanum Strontium Cobalt Oxide LSCO | Lanthanum Calcium Manganese Oxide LCMO | Lithium Cobalt Oxide LiCo2O4 | Lead Zirconate TitanatePZT | Boron Oxide Doped Lithium Phosphate Li3PO4:B2O3 |
| Lithium Lanthanum Titanate Li0.35La0.57TiO3 | Lanthanum Zirconium Lithium Oxide LLZO | Lanthanum Strontium Manganese OxideLSMO | Bismuth FerriteBiFeO3 | Barium Strontium Titanate BaSrTiO3 |
